v w k s e p . 1 9 9 6 m a r k e t i n g i n f o r m a t i o n d d b 6 u 8 4 n 1 0 . . . 1 6 . . r ( e c o n o ) 1 0 4 , 8 8 0 8 0 7 0 , 4 6 0 , 9 6 1 5 , 2 4 5 , 5 3 , 8 1 1 1 , 4 3 5 7 , 1 5 m a x . 1 0 7 , 5 9 3 0 , 2 p + 1 3 p + 1 6 n - 1 4 n - 1 7 r 1 - 4 s 5 - 8 t 9 - 1 2 n - n - p + p + r s t e u r o p e a n p o w e r - s e m i c o n d u c t o r a n d e l e c t r o n i c s c o m p a n y g m b h + c o . k g www.datasheet www.datasheet www.datasheet www.datasheet 4u 4u4u 4u .com .com .com .com
dd b6u 84 n 10...16 ..r (econo) elektrische eigenschaften / electrical properties h?chstzul?ssige werte / maximum rated values periodische spitzensperrspannung t vj = - 40c...t vj max v rrm 1000, 1200 v repetitive peak reverse voltage 1400, 1600 v sto?spitzensperrspannung t vj = + 25c...t vj max v rsm 1100, 1300 v non-repetitive peak reverse voltage 1500, 1700 v durchla?strom-grenzeffektivwert (pro element) i frmsm 60 a rms forward current (per chip) ausgangsstrom t c = 100c i d 85 a output current t c = 84c 104 a t a = 45c, kp 0,5 s 58 a t a = 45c, kp 0,33 s 75 a t a = 35c, kp 0,41 s (v l = 45l/s) 104 a t a = 35c, kp 0,33 s (v l = 90l/s) 104 a sto?strom-grenzwert t vj = 25c, t p = 10ms i fsm 650 a surge forward current t vj = t vj max , t p = 10ms 550 a grenzlastintegral t vj = 25c, t p = 10ms i2t 2100 a2s i2t-value t vj = t vj max , t p = 10ms 1500 a2s charakteristische werte / characteristic values durchla?spannung forward voltage t vj = t vj max , i f = 100a v f max. 1,55 v schleusenspannung threshold voltage t vj = t vj max v (to) 0,75 v ersatzwiderstand forward slope resistance t vj = t vj max r t 5,5 m sperrstrom reverse current t vj = t vj max, v r = v rrm i r max. 5 ma isolations-prfspannung rms, f = 50hz, t = 1min v isol 2,5 kv insulation test voltage rms, f = 50hz, t = 1sec 3,0 kv thermische eigenschaften / thermal properties innerer w?rmewiderstand pro modul / per module, = 120rect r thjc max. 0,241 c/w thermal resistance, junction to case pro element / per chip, = 120rect max. 1,450 c/w pro modul / per module, dc max. 0,183 c/w pro element / per chip, dc max. 1,100 c/w bergangs-w?rmewiderstand pro modul / per module r thck max. 0,033 c/w thermal resistance, case to heatsink pro element / per chip max. 0,200 c/w h?chstzul. sperrschichttemp. max. junction temperature t vj max 150 c betriebstemperatur operating temperature t c op - 40...+150 c lagertemperatur storage temperature t stg - 40...+150 c mechanische eigenschaften / mechanical properties geh?use, siehe anlage case, see appendix si-elemente mit l?tkontakt, glaspassiviert si-pellets with soldered contact, glass-passivated innere isolation internal insulation al 2 o 3 drehmom.f.mech. befest. mounting torque toleranz / tolerance 15% m1 4 nm drehmom. f. el. anschlsse terminal connection torque g typ. 185 g gewicht weight 12,5 mm kriechstrecke creepage distance f = 50hz 50 m/s2 schwingfestigkeit vibration resistance f = 50hz 50 m/s2 khlk?rper / heatsinks : eupec gmbh + co. kg; max-planck-str. 5; d-59581 warstein; tel: +49 2902 764-0; fax: ...-252 www.datasheet www.datasheet www.datasheet www.datasheet 4u 4u4u 4u .com .com .com .com
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